FQPF5N50

500V N-Channel MOSFET, TO-220, 5A, Low Crss typical 8.5pF, Fast switching

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Price:: US $0.30~0.50 / piece [Get Latest Price]

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PartNumber:: FQPF5N50

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 10+

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Products Upload time: 2011-11-03

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Product Summary

The N-Channel enhancement mode power field effect transistor FQPF5N50 is produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF5N50 is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge.

Parametrics

FQPF5N50 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 500 V ; (2)ID, Drain Current: Continuous (TC = 25℃): 3A; Continuous (TC = 100℃): 1.9A; (3)IDM, Drain Current - Pulsed: 12 A ; (4)VGSS, Gate-Source Voltage: ± 30 V ; (5)EAS, Single Pulsed Avalanche Energy: 300 mJ ; (6)IAR, Avalanche Current: 5 A ; (7)EAR, Repetitive Avalanche Energy: 3.9mJ ; (8)dv/dt, Peak Diode Recovery dv/dt: 4.5 V/ns ; (9)PD, Power Dissipation (TC = 25℃): 39w; Derate above 25℃: 0.31 W/℃; (10)TJ, TSTG, Operating and Storage Temperature Range: -55 to +175 ℃ ; (11)TL, Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.

Features

FQPF5N50 features: (1)5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V; (2)Low gate charge ( typical 13nC); (3)Low Crss ( typical 8.5pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.